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Izengezo kanye nezinqubo zokunyathelisa ezisezingeni eliphansi lokushisa zingahlanganisa izinto ezihlukahlukene ze-elekthronikhi ezisebenzisa amandla nezidla amandla kuma-substrates aguquguqukayo ngezindleko eziphansi.Nokho, ukukhiqizwa kwamasistimu kagesi aphelele asuka kulawa madivayisi ngokuvamile kudinga amandla kagesi ukuze aguqule phakathi kwama-voltage ahlukahlukene okusebenza we izinto ezisetshenziswayo.Izingxenye ezingenzi lutho—ama-inductors, ama-capacitor, nama-resistors—zenza imisebenzi efana nokuhlunga, ukugcinwa kwamandla esikhathi esifushane, nokukala amandla kagesi, okubalulekile kuma-electronics nezinye izinhlelo zokusebenza eziningi.Kulesi sihloko, sethula ama-inductors, ama-capacitor, ama-resistor kanye namasekhethi e-RLC aphrintwe isikrini kuma-substrates epulasitiki aguquguqukayo, futhi abike inqubo yokuklama ukuze kuncishiswe ukumelana nochungechunge lwama-inductors ukuze asetshenziswe kumadivayisi kagesi kagesi .I-inductor ephrintiwe kanye ne-resistor bese ihlanganiswa kusilawuli se-boost circuit.Manufacture yama-organic light-emitting diode namabhethri e-lithium-ion aguquguqukayo. Izilawuli zamandla kagesi zisetshenziselwa ukunika amandla ama-diode ebhethrini, okubonisa amandla ezingxenye eziphrintiwe zokungena esikhundleni sezinto ezijwayelekile zokukhweza ngaphezulu ezinhlelweni zokusebenza zesiguquli se-DC-DC.
Eminyakeni yamuva nje, ukusetshenziswa kwemishini ehlukahlukene eguquguqukayo emikhiqizweni ye-elekthronikhi egqokekayo nendawo enkulu kanye ne-Inthanethi Yezinto1,2 sekuthuthukisiwe.Lokhu kufaka phakathi izinto zokuvuna amandla, njenge-photovoltaic 3, i-piezoelectric 4, ne-thermoelectric 5; imishini yokugcina amandla, njengamabhethri 6, 7; kanye namadivayisi asebenzisa amandla, njengezinzwa 8, 9, 10, 11, 12, nemithombo yokukhanya 13.Nakuba inqubekelaphambili enkulu yenziwe emithonjeni yamandla ngayinye kanye nemithwalo, ukuhlanganisa lezi zingxenye zibe uhlelo oluphelele lwe-elekthronikhi ngokuvamile kudinga amandla kagesi ukuze nqoba noma yikuphi ukungafani phakathi kokuziphatha kokuphakelwa kwamandla kanye nezidingo zokulayisha.Isibonelo, ibhethri ikhiqiza i-voltage eguquguqukayo ngokwesimo sayo sokushajwa.Uma ukulayisha kudinga i-voltage engaguquki, noma ngaphezulu kwevoltheji engaphehlwa yibhethri, kudingeka amandla kagesi. .Ama-electronics anamandla asebenzisa izingxenye ezisebenzayo (ama-transistors) ukwenza imisebenzi yokushintsha nokulawula, kanye nezingxenye ezingenzi lutho (ama-inductors, ama-capacitor, nama-resistors) .Isibonelo, kumjikelezo wesilawuli esishintshayo, i-inductor isetshenziselwa ukugcina amandla phakathi nomjikelezo ngamunye wokushintsha. , i-capacitor isetshenziselwa ukunciphisa i-voltage ripple, futhi isilinganiso se-voltage esidingekayo ukuze kulawulwe impendulo senziwa kusetshenziswa isihlukanisi esiphikisayo.
Amadivayisi kagesi anamandla afanele izinto ezigqokekayo (njenge-pulse oximeter 9) adinga ama-volts amaningana nama-milliamp amaningana, ngokuvamile asebenza kububanzi befrikhwensi yamakhulu e-kHz ukuya kuma-MHz amaningana, futhi adinga ama-μH ambalwa kanye ne-μH embalwa inductance kanye ne-Capacitance μF 14 ngokulandelana.Indlela evamile yokukhiqiza lezi zisekhethi ukudayisa izingxenye ezihlukene ebhodini lesekethe eliphrintiwe eliqinile (PCB).Nakuba izingxenye ezisebenzayo zamasekethe kagesi wamandla ngokuvamile zihlanganiswa zibe yisekethe eyodwa ye-silicon edidiyelwe (IC), izakhi ze-passive zivame yangaphandle, noma ukuvumela amasekhethi angokwezifiso, noma ngenxa yokuthi i-inductance edingekayo namandla amakhulu kakhulu ukuthi angafakwa ku-silicon .
Uma kuqhathaniswa nobuchwepheshe bokukhiqiza obusekelwe ku-PCB bendabuko, ukukhiqizwa kwemishini kagesi namasekethe ngokusebenzisa inqubo yokunyathelisa eyengeziwe kunezinzuzo eziningi mayelana nokulula kanye nezindleko.Okokuqala, njengoba izingxenye eziningi zesekethe zidinga izinto ezifanayo, njengezinsimbi zoxhumana nabo. kanye nokuxhumana, ukuphrinta kuvumela izingxenye eziningi ukuthi zenziwe ngesikhathi esisodwa, ngezinyathelo ezimbalwa zokucubungula kanye nemithombo embalwa yezinto zokwakha15.Ukusetshenziswa kwezinqubo zokwengeza ukuze kuthathelwe indawo izinqubo ezikhiphayo ezifana ne-photolithography kanye ne-etching kunciphisa ngokwengeziwe inqubo eyinkimbinkimbi kanye nemfucuza yezinto ezibonakalayo16, 17, I-18, kanye ne-19.Ngaphezu kwalokho, amazinga okushisa aphansi asetshenziselwa ukunyathelisa ahambisana ne-substrates yepulasitiki eguquguqukayo futhi engabizi, okuvumela ukusetshenziswa kwezinqubo zokukhiqiza i-roll-to-roll ngesivinini esikhulu ukumboza amadivaysi kagesi 16, 20 ezindaweni ezinkulu.Ngokwezicelo ezingenakugcwaliseka ngokugcwele ngezingxenye eziphrintiwe, kuye kwasungulwa izindlela ezihlanganisiwe lapho izingxenye ze-surface mount technology (SMT) zixhunywa kuma-substrates aguquguqukayo angu-21, 22, 23 eduze kwezingxenye eziphrintiwe emazingeni okushisa aphansi.Kule ndlela ye-hybrid, namanje kudingekile ukushintsha izingxenye ze-SMT eziningi ngangokunokwenzeka ngozakwabo abaphrintiwe ukuze uthole izinzuzo zezinqubo ezengeziwe futhi kwandiswe ukuguquguquka okuphelele kwesekethe. izingxenye, okugcizelelwa ngokukhethekile ekushintsheni ama-inductors e-SMT amakhulu nge-planar spiral inductors.Phakathi kobuchwepheshe obuhlukahlukene bokukhiqiza ama-electronics aphrintiwe, ukuphrinta kwesikrini kulungele ikakhulukazi izingxenye ze-passive ngenxa yobukhulu bawo befilimu (okudingekile ukuze kuncishiswe ukumelana nochungechunge lwezici zensimbi. ) kanye nesivinini esikhulu sokuphrinta, ngisho nalapho uhlanganisa izindawo ezisezingeni elingamasentimitha Kuyafana nangezinye izikhathi.Indaba 24.
Ukulahleka kwezingxenye ze-passive zemishini kagesi kagesi kumele kuncishiswe, ngoba ukusebenza kahle kwesekethe kuthinta ngqo inani lamandla adingekayo ukuze kusebenze uhlelo.Lokhu kuyinselele ikakhulukazi kuma-inductors aphrintiwe akhiwe ngamakhoyili amade, ngakho-ke asengozini yochungechunge oluphezulu. ukumelana.Ngakho-ke, nakuba kuye kwenziwa imizamo yokunciphisa ukumelana kwamakhoyili angu-25, 26, 27, 28, kusenokuntuleka kwezingxenye ze-passive eziphrintiwe eziphrintiwe zamandla kagesi. izingxenye kuma-substrates aguquguqukayo aklanyelwe ukusebenza kumasekhethi anomsindo we-radio frequency identification (RFID) noma izinjongo zokuvuna amandla 10, 12, 25, 27, 28, 29, 30, 31.Ezinye zigxila ekuthuthukisweni kwempahla noma yokukhiqiza futhi zibonise izingxenye ezijwayelekile 26, 32, 33, 34 ezingalungiselelwe izinhlelo zokusebenza ezithile.Ngokuphambene, amasekhethi kagesi kagesi njengezilawuli zikagesi ngokuvamile asebenzisa izingxenye ezinkulu kunezisetshenziswa ezivamile eziphrintiwe futhi azidingi ukukhala, ngakho-ke imiklamo yezingxenye ehlukene iyadingeka.
Lapha, sethula idizayini nokwenza kahle kwama-inductors aphrinte isikrini ebangeni le-μH ukuze kuzuzwe ukumelana nochungechunge oluncane kakhulu nokusebenza okuphezulu kumafrikhwensi ahlobene nama-electronics amandla.Ama-inductors aphrintiwe isikrini, ama-capacitor, nama-resistor anamanani engxenye ehlukahlukene ayakhiqizwa. kuma-substrates epulasitiki aguquguqukayo.Ukufaneleka kwalezi zingxenye emikhiqizweni ye-elekthronikhi eguquguqukayo kwaboniswa okokuqala ngesekethe elula ye-RLC.I-inductor ephrintiwe kanye ne-resistor bese ihlanganiswa ne-IC ukuze yenze i-boost regulator.Ekugcineni, i-organic light-emitting diode (OLED). ) kanye nebhethri le-lithium-ion eliguquguqukayo liyakhiqizwa, futhi isilawuli sikagesi sisetshenziselwa ukunika amandla i-OLED ebhethrini.
Ukuze sidizayine ama-inductors aphrintiwe ama-electronics amandla, siqale sabikezela inductance kanye nokumelana kwe-DC kochungechunge lwama-inductor geometries ngokusekelwe kumodeli yamanje yeshidi ehlongozwayo ku-Mohan et al. 35, kanye nama-inductors akhiwe amajiyometri ahlukene ukuze kuqinisekiswe ukunemba kwemodeli.Kulo msebenzi, kukhethwe umumo oyindilinga we-inductor ngoba i-inductance ephakeme 36 ingafinyelelwa ngokumelana okuphansi uma kuqhathaniswa ne-polygonal geometry.Ithonya likayinki uhlobo kanye nenani lemijikelezo yokuphrinta ekumelaneni kuyanqunywa.Le miphumela yabe isisetshenziswa nemodeli ye-ammeter ukuklama ama-inductors angu-4.7 μH no-7.8 μH alungiselelwe ubuncane bokumelana kwe-DC.
I-inductance kanye nokumelana kwe-DC kwama-spiral inductors kungachazwa ngamapharamitha ambalwa: ububanzi bangaphandle do, jika ububanzi w kanye ne-spacing s, inombolo yokujika n, nokumelana neshidi lomqhubi Rsheet.Umfanekiso 1a ubonisa isithombe se-inductor eyindilinga ephrintiwe isikrini sikasilika. nge-n = 12, ebonisa amapharamitha ejiyomethri anquma ukuthuthwa kwayo.Ngokwemodeli ye-ammeter ka-Mohan et al. 35, i-inductance ibalwa ochungechungeni lwe-inductor geometries, lapho
(a) Isithombe se-inductor ephrintiwe isikrini esibonisa amapharamitha ejiyomethri.Ububanzi bungu-3 cm.I-Inductance (b) kanye ne-DC resistance (c) yamajiyometri e-inductor ahlukahlukene.Imigqa namamaki ahambisana namanani abaliwe nakaliwe, ngokulandelana. (d,e) Ukumelana kwe-DC kwama-inductors L1 kanye ne-L2 kuphrintwa isikrini ngoyinki wesiliva we-Dupont 5028 no-5064H, ngokulandelanayo.(f,g) ama-SEM micrographs wesikrini samafilimu aphrintwe i-Dupont 5028 kanye ne-5064H, ngokulandelanayo.
Emazingeni aphezulu, umphumela wesikhumba kanye namandla e-parasitic kuzoshintsha ukumelana kanye ne-inductance ye-inductor ngokuvumelana nenani layo le-DC.I-inductor kulindeleke ukuthi isebenze ngemvamisa ephansi ngokwanele ukuthi le miphumela ayinaki, futhi idivayisi iziphatha njenge-inductance njalo. ngokuphikiswa okuqhubekayo ochungechungeni.Ngakho-ke, kulo msebenzi, sihlaziye ubudlelwano phakathi kwemingcele yejometri, inductance, kanye nokumelana kwe-DC, futhi sasebenzisa imiphumela ukuze sithole i-inductance enikeziwe enokumelana okuncane kakhulu kwe-DC.
I-inductance kanye nokumelana kubalwa ochungechungeni lwemingcele yejometri engabonakala ngokuphrinta isikrini, futhi kulindeleke ukuthi i-inductance ebangeni le-μH izokhiqizwa.Amadayamitha angaphandle angu-3 no-5 cm, ububanzi bomugqa wama-microns angu-500 no-1000 , futhi kuqhathaniswa namajika ahlukahlukene.Esibalweni, kucatshangwa ukuthi ukumelana kweshidi kungu-47 mΩ/ □, okuhambisana nongqimba lwe-Dupont 5028 lwesiliva oluwugqinsi lwe-Dupont 5028 oluphrintwe ngesikrini semeshi engu-400 kanye nokusetha w = s.The I-inductance ebaliwe kanye namanani okumelana aboniswa kuMfanekiso 1b no-c, ngokulandelanayo. Imodeli ibikezela ukuthi kokubili inductance nokumelana kuyakhula njengoba ububanzi bangaphandle kanye nenani lokujika likhuphuka, noma njengoba ububanzi bomugqa buncipha.
Ukuze kuhlolwe ukunemba kwezibikezelo zemodeli, ama-inductors ejiyometri ehlukahlukene kanye nama-inductance akhiwe engxenyeni engaphansi ye-polyethylene terephthalate (PET). inani elilindelekile, ikakhulukazi ngenxa yezinguquko kugqinsi kanye nokufana kukayinki ofakiwe, i-inductance ibonise ukuvumelana okuhle kakhulu nemodeli.
Le miphumela ingasetshenziselwa ukuklama i-inductor ene-inductance edingekayo kanye nokumelana okuncane kwe-DC.Ngokwesibonelo, ake sithi i-inductance engu-2 μH iyadingeka.Umdwebo 1b ubonisa ukuthi le nqubo ingenziwa ngobubanzi obungaphandle obungu-3 cm, ububanzi bomugqa. ka-500 μm, kanye nokuphenduka okungu-10. I-inductance efanayo ingabuye ikhiqizwe kusetshenziswa ububanzi bangaphandle obungu-5 cm, ububanzi bomugqa ongu-500 μm kanye nokuphenduka okungu-5 noma ububanzi bomugqa ongu-1000 μm kanye nokuphenduka okungu-7 (njengoba kuboniswe esithombeni).Ukuqhathanisa ukumelana kwalezi zintathu amajiyometri angenzeka kuMfanekiso 1c, kungatholakala ukuthi ukumelana okuphansi kwe-inductor engu-5 cm enobubanzi bomugqa ongu-1000 μm ngu-34 Ω, okucishe kube ngama-40% aphansi kunamanye amabili.Inqubo yokuklama evamile ukuze kuzuzwe inductance enikeziwe ngokumelana okuncane kufingqwa ngale ndlela elandelayo: Okokuqala, khetha ububanzi obuphezulu obuvunyelwe bangaphandle ngokuya ngemikhawulo yesikhala ebekwe uhlelo lokusebenza.Khona-ke, ububanzi bomugqa kufanele bube bukhulu ngangokunokwenzeka ngenkathi usafinyelela inductance edingekayo ukuze uthole isilinganiso esiphezulu sokugcwalisa. (Isibalo (3)).
Ngokwandisa ukushuba noma ukusebenzisa into ene-conductivity ephakeme ukuze kuncishiswe ukumelana kweshidi lefilimu yensimbi, ukumelana kwe-DC kungancishiswa ngokuqhubekayo ngaphandle kokuthinta i-inductance.Ama-inductors amabili, amapharamitha wejometri anikezwa kuThebula 1, okuthiwa i-L1 ne-L2, akhiqizwa ngezinombolo ezihlukene zokugqoka ukuze kuhlolwe ukuguqulwa kokumelana.Njengoba inani lezingubo ze-inki landa, ukumelana kuncipha ngokulinganayo njengoba kulindelekile, njengoba kuboniswe ku-Figure 1d no-e, okuyi-inductors L1 kanye ne-L2, ngokulandelana.Izibalo 1d kanye ne-e bonisa ukuthi ngokusebenzisa izingqimba ezingu-6 zokumboza, ukumelana kungancishiswa kuze kufike izikhathi ezingu-6, futhi ukuncipha okukhulu kokumelana (50-65%) kwenzeka phakathi kongqimba 1 kanye nongqimba 2. Njengoba ungqimba lweyinki ngalunye luncane kakhulu, a isikrini esinosayizi omncane wegridi uma kuqhathaniswa (imigqa engu-400 iyintshi ngayinye) sisetshenziselwa ukuphrinta lawa ma-inductors, okusivumela ukuthi sifunde umthelela wokushuba kwekhondatha ekumelaneni.Inqobo nje uma izici zephethini zihlala zizinkulu kunokulungiswa okuncane kwegridi, a ukujiya okufanayo (nokumelana) kungafinyelelwa ngokushesha ngokuphrinta inombolo encane yezingubo ezinobukhulu begridi enkulu.Le ndlela ingasetshenziswa ukuze kuzuzwe ukumelana okufanayo kwe-DC njenge-inductor ene-coated 6 okuxoxwe ngayo lapha, kodwa ngesivinini esiphezulu sokukhiqiza.
Izibalo 1d kanye ne-e nazo zibonisa ukuthi ngokusebenzisa inki ye-silver conductive ye-flake ye-DuPont 5064H, ukumelana kuncishiswa nge-factor of two.Kusuka kuma-micrographs we-SEM wamafilimu aphrintiwe ngamayinki amabili (Umfanekiso 1f, g), kungaba sibonile ukuthi ukuhanjiswa okuphansi kukayinki we-5028 kungenxa yobukhulu bezinhlayiyana ezincane kanye nokuba khona kwama-void amaningi phakathi kwezinhlayiya zefilimu ephrintiwe.Ngakolunye uhlangothi, i-5064H inama-flakes amakhulu, ahlelwe ngokuseduze, okwenza iziphathe eduze nenqwaba. isiliva.Nakuba ifilimu ekhiqizwa yilo inki incane kune-inki engu-5028, enesendlalelo esisodwa se-4 μm nezingqimba ezingu-6 ze-22 μm, ukwanda kwe-conductivity kwanele ukunciphisa ukumelana okuphelele.
Okokugcina, nakuba i-inductance (i-equation (1)) incike enanini lokuphenduka (w + s), ukumelana (isibalo (5)) kuncike kuphela kububanzi bomugqa w.Ngakho-ke, ngokwandisa w ngokuhlobene no-s, ukumelana zingancishiswa ngokuqhubekayo.Ama-inductors amabili engeziwe i-L3 ne-L4 aklanyelwe ukuthi abe nama-w = 2s kanye nobubanzi obukhulu bangaphandle, njengoba kukhonjisiwe kuThebula 1. Lawa ma-inductors akhiqizwa ngezingqimba eziyisi-6 ze-DuPont 5064H enamathelayo, njengoba kubonisiwe ekuqaleni, ukuhlinzeka ukusebenza okuphezulu kakhulu.I-inductance ye-L3 ingu-4.720 ± 0.002 μH futhi ukumelana kungu-4.9 ± 0.1 Ω, kuyilapho i-inductance ye-L4 ingu-7.839 ± 0.005 μH no-6.9 ± 0.1 Ω, ezivumelana kahle nemodeli. ukwanda kogqinsi, ukuqhutshwa kwe-conductivity, kanye nama-w/s, lokhu kusho ukuthi isilinganiso se-L/R sikhuphuke ngaphezu kwe-oda lobukhulu ngokuqhathaniswa nenani elikuMdwebo 1.
Nakuba ukumelana ne-DC okuphansi kuyathembisa, ukuhlola ukufaneleka kwama-inductors kumishini kagesi kagesi esebenza ebangeni le-kHz-MHz kudinga ukucaciswa kwezinhlamvu kumafrikhwensi e-AC.Umfanekiso 2a ubonisa ukuncika kwemvamisa kokumelana nokusabela kwe-L3 ne-L4.Kumafrikhwensi angaphansi kuka-10 MHz , ukumelana kuhlala kufana nenani lakho le-DC, kuyilapho ukusabela kukhula ngokuhambisana nemvamisa, okusho ukuthi i-inductance ihlala njalo njengoba kulindelekile.Imvamisa ye-self-resonant ichazwa ngokuthi imvamisa lapho i-impedance ishintsha ukusuka ku-inductive ukuya ku-capacitive, I-L3 ibe ngu-35.6 ± 0.3 MHz kanye ne-L4 ibe ngu-24.3 ± 0.6 MHz. Ukuncika kwemvamisa kwe-quality factor Q (elingana no-ωL/R) kuboniswa kuMfanekiso 2b.L3 kanye ne-L4 kufinyelela izici zekhwalithi eziphezulu ezingu-35 ± 1 kanye no-33 ± 1 kumafrikhwensi ka-11 kanye no-16 MHz, ngokulandelanayo.I-inductance yama-μH ambalwa kanye ne-Q ephakeme ngokuqhathaniswa kumafrikhwensi e-MHz kwenza lawa ma-inductors anele ukuze athathele indawo ama-inductors asendaweni evamile kuma-converter anamandla aphansi e-DC-DC.
Ukumelana okulinganiselwe okungu-R nokusabela okungu-X (a) kanye nesici sekhwalithi Q (b) sama-inductors i-L3 ne-L4 kuhlobene nobuningi.
Ukuze kuncishiswe unyawo oludingekayo ukuze kube nomthamo onikeziwe, kungcono ukusebenzisa ubuchwepheshe be-capacitor obunamandla amakhulu athile, okulingana ne-dielectric engaguquki ε ehlukaniswe ubukhulu be-dielectric.Kulo msebenzi, sikhethe inhlanganisela ye-barium titanate. njenge-dielectric ngoba ine-epsilon ephakeme kunamanye ama-organic dielectrics acutshungulwa isisombululo.Isendlalelo se-dielectric siphrintiwe phakathi kwama-conductor amabili esiliva ukuze enze isakhiwo sensimbi-dielectric-metal.Ama-Capacitors anobukhulu obuhlukahlukene ngamasentimitha, njengoba kuboniswe kuMfanekiso 3a , akhiqizwa kusetshenziswa izingqimba ezimbili noma ezintathu zikayinki we-dielectric ukuze kugcinwe isivuno esihle.Umfanekiso 3b ubonisa i-SEM micrograph ephambanayo ye-capacitor emele eyenziwe ngezingqimba ezimbili ze-dielectric, enobukhulu obuphelele be-dielectric obungu-21 μm. Ama-electrode aphezulu naphansi kukhona ungqimba olulodwa kanye nezingqimba eziyisithupha ezingu-5064H ngokulandelana.Izinhlayiya ze-barium titanate ezinosayizi omncane we-Micron ziyabonakala esithombeni se-SEM ngoba izindawo ezikhanyayo zizungezwe i-organic binder emnyama. ifilimu yensimbi ephrintiwe, njengoba kuboniswe emfanekisweni okhuliswe kakhulu.
(a) Isithombe se-capacitor esinezindawo ezinhlanu ezihlukene.(b) I-SEM micrograph ye-cross-sectional ye-capacitor enezendlalelo ezimbili ze-dielectric, ebonisa i-barium titanate dielectric kanye nama-electrode esiliva.(c) Amandla wama-capacitor ane-barium titanate engu-2 no-3 izendlalelo ze-dielectric nezindawo ezihlukene, zikalwa ku-1 MHz.(d) Ubudlelwano phakathi komthamo, i-ESR, kanye nesici sokulahlekelwa kwe-capacitor engu-2.25 cm2 enezendlalelo ezingu-2 zokumbozwa kwe-dielectric kanye nemvamisa.
Amandla alingana nendawo elindelekile. Njengoba kuboniswe kuMfanekiso 3c, amandla athile e-dielectric enezingqimba ezimbili ngu-0.53 nF/cm2, futhi amandla athile e-dielectric enezingqimba ezintathu ngu-0.33 nF/cm2.Lawa manani ahambisana ne-dielectric constant ye-13. I-capacitance and dissipation factor (DF) nayo ilinganiswe kuma-frequencies ahlukene, njengoba kuboniswe ku-Figure 3d, i-2.25 cm2 capacitor enezingxenye ezimbili ze-dielectric.Sithole ukuthi i-capacitance yayiyisicaba ku-frequency range of interest, ikhuphuka ngo-20% kusukela ku-1 kuya ku-10 MHz, kuyilapho ebangeni elifanayo, i-DF inyuke isuka ku-0.013 yaya ku-0.023.Njengoba isici sokuqothula siyisilinganiso sokulahlekelwa kwamandla kumandla agcinwe kumjikelezo we-AC ngamunye, i-DF ka-0.02 isho ukuthi u-2% wamandla aphathwayo. nge-capacitor iyadlulwa.Lokhu kulahlekelwa kuvame ukuvezwa njengokuphikiswa kochungechunge oluncike ku-frequency-dependent equivalent series (ESR) exhunywe ochungechungeni ne-capacitor, elilingana ne-DF/ωC.Njengoba kuboniswe kuMfanekiso 3d, kumafrikhwensi amakhulu kuno-1 MHz, I-ESR ingaphansi kuka-1.5 Ω, futhi kumafrikhwensi amakhulu kuno-4 MHz, i-ESR ingaphansi kuka-0.5 Ω. Nakuba kusetshenziswa lobu buchwepheshe be-capacitor, ama-capacitor ekilasi le-μF adingekayo kuziguquli ze-DC-DC adinga indawo enkulu kakhulu, kodwa i-100 pF- Ibanga le-nF capacitance kanye nokulahlekelwa okuphansi kwalawa ma-capacitor kuwenza afanelekele ezinye izinhlelo zokusebenza, njengezihlungi nama-circuits azwakalayo .Izindlela ezihlukahlukene zingasetshenziswa ukwandisa amandla.I-dielectric engaguquki inyusa i-capacitance ethize 37; isibonelo, lokhu kungafezwa ngokukhuphula ukugxila kwezinhlayiya ze-barium titanate ku-inki.Kungasetshenziswa ukushuba kwe-dielectric encane, nakuba lokhu kudinga i-electrode engezansi enobunzima obuphansi kune-flake yesiliva ephrintiwe isikrini.I-Thinner, i-capacitor ephansi ye-roughness izingqimba zingafakwa ngokuphrinta kwe-inkjet 31 noma ukuphrinta kwe-gravure 10, okungahlanganiswa nenqubo yokuphrinta isikrini.Ekugcineni, izingqimba eziningi ezishintshanayo zensimbi ne-dielectric zingafakwa futhi ziphrintiwe futhi zixhunywe ngokuhambisana, ngaleyo ndlela zikhulise amandla angu-34 endaweni ngayinye yeyunithi. .
Isihlukanisi se-voltage esakhiwe ipheya yezinto eziphikisayo ngokuvamile sisetshenziselwa ukwenza isilinganiso se-voltage esidingekayo ukuze kulawulwe impendulo yesilawuli sikagesi. Kulolu hlobo lohlelo lokusebenza, ukumelana kwesiphikisa esiphrintiwe kufanele kube kububanzi be-kΩ-MΩ, futhi umehluko phakathi izisetshenziswa zincane.Lapha, kutholwe ukuthi ukumelana kweshidi likayinki wekhabhoni ophrintelwe isendlalelo esisodwa kwesikrini kwakungu-900 Ω/ □.Lolu lwazi lusetshenziselwa ukuklama ama-resistors amabili aqondile (i-R1 ne-R2) kanye nokumelana nenyoka (R3 ) ngokumelana okulinganiselwe okungu-10 kΩ, 100 kΩ, kanye no-1.5 MΩ. Ukumelana phakathi kwamanani amancane kufinyelelwa ngokuphrinta izendlalelo ezimbili noma ezintathu zikayinki, njengoba kuboniswe kuMfanekiso 4, kanye nezithombe zokuphikiswa okuthathu.Yenza 8- amasampula ayi-12 ohlobo ngalunye; kuzo zonke izimo, ukuchezuka okujwayelekile kokumelana ku-10% noma ngaphansi.Ukushintsha kokumelana kwamasampula anezingqimba ezimbili noma ezintathu zokumboza kuvame ukuba kuncane kakhulu kunamasampula anesendlalelo esisodwa sokumboza.Ushintsho oluncane ekuphikisweni okulinganiselwe futhi isivumelwano esiseduze nevelu lokuzisholo sibonisa ukuthi okunye ukumelana kulobu bubanzi kungatholwa ngokuqondile ngokulungisa ijiyomethri ephikisayo.
Amajiyometri amathathu ahlukene anezinombolo ezihlukene zeyinki eyinki eyikhabhoni.Izithombe zama-resistor amathathu ziboniswa kwesokudla.
Amasekhethi e-RLC ayizibonelo zezincwadi zakudala zenhlanganisela ye-resistor, inductor, ne-capacitor esetshenziselwa ukubonisa nokuqinisekisa ukuziphatha kwezingxenye ze-passive ezihlanganiswe kumasekethe aphrintiwe wangempela.Kulo mjikelezo, i-inductor engu-8 μH kanye ne-0.8 nF capacitor kuxhunywe ochungechungeni, futhi I-resistor engu-25 kΩ ixhunywe ngokuhambisana nazo.Isithombe sesekhethi eguquguqukayo sikhonjiswe kuMfanekiso 5a.Isizathu sokukhetha le nhlanganisela ekhethekile yochungechunge-parallel ukuthi ukuziphatha kwayo kunqunywa ingxenye ngayinye yemvamisa emithathu ehlukene, ukuze ukusebenza kwengxenye ngayinye kungagqanyiswa futhi kuhlolwe. Uma kucatshangelwa ukumelana nochungechunge lwe-7 Ω lwe-inductor kanye ne-1.3 Ω ESR ye-capacitor, impendulo yefrikhwensi elindelekile yesekethe ibaliwe.Umdwebo wesekethe uboniswa kuMfanekiso 5b, futhi kubaliwe. I-impedance amplitude nesigaba kanye namanani akaliwe aboniswa ku-Figure 5c kanye no-d.Emazansi aphansi, i-impedance ephezulu ye-capacitor isho ukuthi ukuziphatha kwesekethe kunqunywa isiphikisi esingu-25 kΩ. indlela ye-LC iyancipha; yonke isifunda sokuziphatha sinamandla kuze kube imvamisa ye-resonant ingu-2.0 MHz.Ngaphezu kwe-resonance frequency, i-impedance ye-inductive ibusa.Umfanekiso wesi-5 ubonisa ngokusobala isivumelwano esihle kakhulu phakathi kwamanani abaliwe nakalwa kulo lonke uhla lwamafrikhwensi.Lokhu kusho ukuthi imodeli esetshenzisiwe lapha (lapho ama-inductors nama-capacitor kuyizingxenye ezikahle ezinokumelana nochungechunge) inembile ekubikezeleni ukuziphatha kwesifunda kulawa maza.
(a) Isithombe sesekethe ye-RLC ephrintiwe isikrini esisebenzisa inhlanganisela yochungechunge lwe-inductor engu-8 μH ne-capacitor engu-0.8 nF ngokuhambisana ne-resistor engu-25 kΩ.(b) Imodeli yesifunda ehlanganisa ukumelana nochungechunge lwe-inductor ne-capacitor.(c ,d) I-impedance amplitude (c) nesigaba (d) sesekhethi.
Okokugcina, ama-inductors aphrintiwe nama-resistors asetshenziswa kusilawuli se-boost.I-IC esetshenziswe kulokhu kuboniswa yi-Microchip MCP1640B14, okuyi-PWM-based synchronous boost regulator ene-frequency yokusebenza engu-500 kHz.Umdwebo wesifunda uboniswa kuMfanekiso 6a.A. I-4.7 μH inductor kanye nama-capacitor amabili (4.7 μF no-10 μF) asetshenziswa njengezinto zokugcina amandla, futhi amapheya aphikisayo asetshenziselwa ukukala i-voltage ephumayo yesilawuli sempendulo.Khetha inani lokumelana ukuze ulungise i-voltage ephumayo ibe ngu-5 V. Isekhethi yakhiwe ku-PCB, futhi ukusebenza kwayo kukalwa ngaphakathi kokumelana nomthwalo kanye nebanga le-voltage yokufaka engu-3 kuya ku-4 V ukuze kulingise ibhethri ye-lithium-ion ezifundeni ezihlukahlukene zokushaja. ukusebenza kahle kwama-inductors nama-resistors e-SMT.Ama-SMT capacitor asetshenziswa kuzo zonke izimo ngoba amandla adingekayo kulolu hlelo lokusebenza makhulu kakhulu ukuthi angaqedwa ngama-capacitor aphrintiwe.
(a) Umdwebo wesekethe yokuqinisa amandla kagesi.(b–d) (b) I-Vout, (c) i-Vsw, kanye (d) Ama-Waveforms wamanje ageleza ku-inductor, i-voltage yokufaka ingu-4.0 V, ukumelana nomthwalo ngu-1 kΩ, futhi i-inductor ephrintiwe isetshenziselwa ukukala.Izinsimbi zokukhweza ezingaphezulu kanye nama-capacitor asetshenziselwa lesi silinganiso.(e) Ngokumelana nomthwalo okuhlukahlukene kanye nama-voltage okokufaka, ukusebenza kahle kwamasekhethi alawula amandla kagesi kusetshenziswa zonke izingxenye zokukhweza phezulu nama-inductors aphrintiwe.(f ) Isilinganiso sokusebenza kahle sokukhweza kwendawo kanye nesekethe ephrintiwe eboniswe kokuthi (e).
Ku-voltage yokufaka engu-4.0 V kanye no-1000 Ω ukumelana nomthwalo, ama-waveforms akalwa kusetshenziswa ama-inductors aphrintiwe aboniswa kuMfanekiso 6b-d.Umfanekiso 6c ubonisa i-voltage kutheminali ye-Vsw ye-IC; i-voltage ye-inductor yi-Vin-Vsw.Umfanekiso we-6d ubonisa ukugeleza kwamanje ku-inductor.Ukusebenza kahle kwesekethe nge-SMT kanye nezingxenye eziphrintiwe kuboniswa kuMfanekiso 6e njengomsebenzi we-voltage yokufaka nokumelana nomthwalo, futhi uMfanekiso 6f ubonisa isilinganiso sokusebenza kahle. wezingxenye eziphrintiwe ezingxenyeni ze-SMT.Ukusebenza kahle okukalwa kusetshenziswa izingxenye ze-SMT kufana nenani elilindelekile elinikezwe eshidini ledatha lomkhiqizi 14. Ngamandla okufakwayo aphezulu (ukumelana nomthwalo ophansi kanye ne-voltage yokufaka ephansi), ukusebenza kahle kwama-inductors aphrintiwe kungaphansi kakhulu lokho kwama-inductors e-SMT ngenxa yokumelana okuphezulu kochungechunge.Nokho, nge-voltage ephezulu yokufaka kanye nokukhishwa okuphezulu kwamanje, ukulahlekelwa ukumelana kubaluleka kancane, futhi ukusebenza kwama-inductors aphrintiwe kuqala ukusondela kulokho kwama-inductors e-SMT.Ngokumelana nomthwalo >500 Ω kanye ne-Vin = 4.0 V noma >750 Ω kanye ne-Vin = 3.5 V, ukusebenza kahle kwama-inductors aphrintiwe kukhulu kuno-85% wama-SMT inductors.
Ukuqhathanisa i-waveform yamanje ku-Figure 6d nokulahlekelwa kwamandla okulinganisiwe kubonisa ukuthi ukulahlekelwa ukumelana ku-inductor kuyimbangela eyinhloko yomehluko ekusebenzeni kahle phakathi kwesekethe ephrintiwe kanye nesekethe ye-SMT, njengoba kulindelekile.Amandla okufaka nawokukhipha alinganiswa ku-4.0 V. i-voltage yokufaka kanye no-1000 Ω ukumelana nomthwalo kungu-30.4 mW no-25.8 mW kumasekhethi anezingxenye ze-SMT, kanye no-33.1 mW no-25.2 mW kumasekhethi anezingxenye eziphrintiwe. isifunda esinezingxenye ze-SMT.I-inductor ye-RMS yamanje ebalwa kusukela ku-waveform ku-Figure 6d ingu-25.6 mA. Njengoba ukumelana nochungechunge lwayo kungu-4.9 Ω, ukulahlekelwa kwamandla okulindelekile ngu-3.2 mW. Lokhu kungu-96% womehluko wamandla ka-3.4 mW DC okaliwe. Ngaphezu kwalokho, isekethe ikhiqizwa ngama-inductors aphrintiwe nama-resistors aphrintiwe kanye nama-inductors aphrintiwe nama-SMT resistors, futhi awukho umehluko obalulekile obonakalayo phakathi kwabo.
Bese isilawuli sikagesi sikhiqizwa ku-PCB eguquguqukayo (ukuphrinta kwesekhethi kanye nokusebenza kwengxenye ye-SMT kuboniswa kokuthi Supplementary Figure S1) futhi kuxhunywe phakathi kwebhethri le-lithium-ion eliguquguqukayo njengomthombo wamandla kanye ne-OLED efana nomthwalo. Ngokusho kukaLochner et al. 9 Ukwenza ama-OLED, iphikseli ngayinye ye-OLED isebenzisa u-0.6 mA ku-5 V. Ibhethri lisebenzisa i-lithium cobalt oxide negraphite njenge-cathode ne-anode, ngokulandelana, futhi lakhiwe nge-doctor blade coating, okuyindlela evame kakhulu yokuphrinta ibhethri.7 umthamo webhethri ngu-16mAh, futhi amandla ombane ngesikhathi sokuhlolwa angu-4.0V.Umfanekiso 7 ubonisa isithombe sesekhethi ku-PCB eguquguqukayo, inika amandla amaphikseli amathathu e-OLED axhunywe ngokuhambisana.Umboniso ubonise amandla ezingxenye zamandla aphrintiwe ukuze ahlanganiswe nezinye. Amadivayisi aguquguqukayo futhi aphilayo ukuze akhe amasistimu kagesi ayinkimbinkimbi.
Isithombe sesekethe yesilawuli sikagesi ku-PCB eguquguqukayo kusetshenziswa ama-inductors aphrintiwe nezimbangi, kusetshenziswa amabhethri e-lithium-ion aguquguqukayo ukuze anike amandla ama-LED amathathu aphilayo.
Sibonise ama-inductors aphrintiwe kwesikrini, ama-capacitor kanye nama-resistors anezinhlobonhlobo zamanani kuma-PET substrates aguquguqukayo, ngenhloso yokushintsha izingxenye ze-surface mount kumishini yamandla kagesi. , kanye nesilinganiso sobubanzi bomugqa wesikhala, nangokusebenzisa ungqimba oluwugqinsi lukayinki ongazweli kancane.Lezi zingxenye zihlanganiswe kusekethe ye-RLC enyatheliswe ngokugcwele futhi eguquguqukayo futhi ibonisa ukuziphatha kukagesi okubikezelwe kububanzi befrikhwensi ye-kHz-MHz, enkulu kakhulu. intshisekelo kumandla kagesi.
Izimo ezijwayelekile zokusetshenziswa zemishini kagesi yamandla aphrintiwe iyagqokeka noma amasistimu e-elekthronikhi aguquguqukayo ahlanganiswe nomkhiqizo, anikwa amandla amabhethri ashintshashintshayo aphinde ashajwe (njenge-lithium-ion), angakwazi ukukhiqiza ama-voltages aguquguqukayo ngokuya ngesimo sokushaja. Uma umthwalo (kuhlanganisa ukuphrinta kanye i-organic electronic equipment) idinga i-voltage engaguquki noma engaphezu kwamandla kagesi ebhethri, kudingeka isilawuli sikagesi.Ngenxa yalesi sizathu, ama-inductors aphrintiwe nama-resistors ahlanganiswe nama-silicon ICs endabuko abe isilawuli esikhulisa amandla ukuze i-OLED isebenze ngamandla kagesi angashintshi. ka-5 V kusuka kumandla webhethri kagesi oguquguqukayo. Phakathi kwebanga elithile lomthwalo wamandla wamanje kanye ne-voltage yokufaka, ukusebenza kahle kwalesi sekethi kudlula u-85% wokusebenza kahle kwesifunda sokulawula kusetshenziswa ama-inductors okukhweza okungaphezulu nama-resistors.Ngaphezu kokulungiswa kwezinto kanye nejometri, ukulahlekelwa okuphikiswayo ku-inductor kuseyisici esikhawulelayo ekusebenzeni kwesifunda emazingeni aphezulu wamanje (i-input yamanje inkulu kune-10 mA). Nokho, emisinga ephansi, ukulahlekelwa ku-inductor kuyancipha, futhi ukusebenza okuphelele kunqunyelwe ukusebenza kahle. ye-IC.Njengoba imishini eminingi ephrintiwe nephilayo idinga imisinga ephansi uma kuqhathaniswa, njengama-OLED amancane asetshenziswa ekuboniseni kwethu, ama-inductors amandla aphrintiwe angabhekwa njengezifanele izinhlelo zokusebenza ezinjalo.Ngokusebenzisa ama-IC aklanyelwe ukusebenza kahle kakhulu emazingeni aphansi amanje, ukusebenza kahle okuphezulu kwesiguquli kungafinyelelwa.
Kulo msebenzi, isilawuli sikagesi sakhiwe ku-PCB yendabuko, i-PCB eguquguqukayo kanye nobuchwepheshe bokuthengisa bengxenye ye-surface mount, kuyilapho ingxenye ephrintiwe ikhiqizwa endaweni ehlukile. amafilimu aphrintiwe kufanele avumele izingxenye ze-passive, kanye nokuxhumana phakathi kwedivayisi namaphedi okuxhumana engxenye ye-surface mount, ukuthi iphrinte kunoma iyiphi i-substrate. isifunda sonke esizokwakhiwa phezu kwama-substrates angabizi (njenge-PET) ngaphandle kwesidingo sezinqubo ezikhiphayo ezifana ne-PCB etching.Ngakho-ke, izingxenye ze-passive eziphrintiwe isikrini ezakhiwe kulo msebenzi zisiza ukuvula indlela yezinhlelo ze-elekthronikhi eziguquguqukayo ezihlanganisa amandla nemithwalo. ngama-electronics asebenza kahle kakhulu, kusetshenziswa ama-substrates angabizi, ikakhulukazi izinqubo ezingezayo kanye nokuncane Inani lezingxenye zokukhweza ngaphezulu.
Kusetshenziswa iphrinta yesikrini se-Asys ASP01M kanye nesikrini sensimbi engagqwali esinikezwe i-Dynamesh Inc., zonke izendlalelo zezingxenye ze-passive zaphrintwa ku-PET substrate eguquguqukayo enogqinsi lwama-76 μm. imigqa nge-intshi ngayinye yongqimba lwe-dielectric kanye nongqimba lokumelana.Sebenzisa amandla e-squeegee angu-55 N, isivinini sokunyathelisa esingu-60 mm / s, ibanga lokuphuka lika-1.5 mm, kanye ne-Serilor squeegee enobunzima be-65 (yensimbi nokumelana izingqimba) noma 75 (zezendlalelo ze-dielectric) zokuphrinta isikrini.
Izendlalelo ze-conductive—ama-inductors nokuxhumana kwama-capacitor nama-resistors—ziphrintwe ngoyinki we-DuPont 5082 noma we-DuPont 5064H wesiliva we-microflake. I-resistor iphrintwe nge-DuPont 7082 carbon conductor. Nge-capacitor dielectric, i-conductive compound BT-101 dielectric titana isetshenziswa.Ingqimba ngayinye ye-dielectric ikhiqizwa kusetshenziswa umjikelezo wokunyathelisa onamaphasi amabili (okumanzi-okumanzi) ukuze kuthuthukiswe ukufana kwefilimu.Engxenyeni ngayinye, umphumela wemijikelezo yokunyathelisa eminingi ekusebenzeni kwengxenye nokuhlukahluka kwakuhlolwa.Amasampuli enziwe nge izigqoko eziningi zezinto ezifanayo zomiswa ku-70 ° C imizuzu engu-2 phakathi kwezingubo. Ngemva kokufaka ijazi lokugcina lempahla ngayinye, amasampula abhakwa ku-140 ° C imizuzu engu-10 ukuqinisekisa ukomiswa okuphelele.Umsebenzi wokuqondanisa okuzenzakalelayo kwesikrini Iphrinta isetshenziselwa ukuqondanisa izendlalelo ezilandelayo.Ukuxhumana nesikhungo se-inductor kufinyelelwa ngokusika imbobo kuphedi ephakathi nendawo kanye nokulandela umkhondo wokuphrinta we-stencil ngemuva kwe-substrate enoyinki we-DuPont 5064H. Ukuxhumana phakathi kwezinto zokuphrinta kusebenzisa i-Dupont Ukuphrinta kwe-stencil engu-5064H.Ukuze kuboniswe izingxenye eziphrintiwe kanye nezingxenye ze-SMT ku-PCB eguquguqukayo eboniswe kuMfanekiso 7, izingxenye eziphrintiwe zixhunywe kusetshenziswa i-Circuit Works CW2400 epoxy conductive, futhi izingxenye ze-SMT zixhunywe ngokuthengiswa kwendabuko.
I-Lithium cobalt oxide (LCO) kanye nama-electrode asekelwe ku-graphite asetshenziswa njenge-cathode ne-anode yebhethri, ngokulandelanayo.I-cathode slurry iyingxube engu-80% LCO (MTI Corp.), 7.5% graphite (KS6, Timcal), 2.5 I-% carbon black (Super P, Timcal) kanye ne-10% ye-polyvinylidene fluoride (PVDF, Kureha Corp.). ) I-anode iyingxube ye-84wt% ye-graphite, 4wt% carbon black kanye ne-13wt% PVDF.N-Methyl-2-pyrrolidone (NMP, Sigma Aldrich) isetshenziselwa ukuhlakaza i-PVDF binder futhi ihlakaze i-slurry.I-slurry yahlanganiswa ngu ukunyakazisa nge-vortex mixer ngobusuku obubodwa.I-0.0005 inch thick stainless steel foil kanye ne-10 μm nickel foil isetshenziswa njengabaqoqi bamanje be-cathode ne-anode, ngokulandelana. mm / s.Shisisa i-electrode kuhhavini ku-80 ° C amahora angu-2 ukuze ususe i-solvent.Ukuphakama kwe-electrode ngemva kokumisa cishe ku-60 μm, futhi ngokusekelwe esisindweni sezinto ezisebenzayo, umthamo wethiyori ngu-1.65 mAh. /cm2.Ama-electrode asikwa abe yizilinganiso ezingu-1.3 × 1.3 cm2 futhi ashiswe kuhhavini we-vacuum engu-140 ° C ngobusuku bonke, abese evalwa ngezikhwama ze-aluminium laminate ebhokisini legilavu ​​eligcwele i-nitrogen.Isixazululo sefilimu ye-polypropylene i-anode ne-cathode kanye ne-1M LiPF6 ku-EC/DEC (1:1) isetshenziswa njenge-electrolyte yebhethri.
I-OLED eluhlaza iqukethe i-poly(9,9-dioctylfluorene-co-n-(4-butylphenyl)-diphenylamine) (TFB) kanye ne-poly((9,9-dioctylfluorene-2,7- (2,1,3-benzothiadiazole-) 4, 8-diyl)) (F8BT) ngokuya ngenqubo echazwe ku-Lochner et al.
Sebenzisa iphrofayili ye-Dektak stylus ukuze ulinganise ukushuba kwefilimu.Ifilimu yasikwa ukuze kulungiswe isampula ehlukene ukuze iphenywe ngokuskena i-electron microscopy (SEM).I-FEI Quanta 3D field emission gun (FEG) SEM isetshenziselwa ukuveza ukwakheka kokuphrintiwe. ifilimu futhi uqinisekise isilinganiso sogqinsi.Ucwaningo lwe-SEM lwenziwe ngevolthi esheshayo engu-20 keV kanye nebanga lokusebenza elijwayelekile elingu-10 mm.
Sebenzisa i-multimeter yedijithali ukukala ukumelana ne-DC, i-voltage kanye namandla.I-AC impedance yama-inductors, ama-capacitor namasekhethi kukalwa kusetshenziswa imitha ye-Agilent E4980 LCR kumafrikhwensi angaphansi kuka-1 MHz kanye ne-Agilent E5061A yokuhlaziya inethiwekhi isetshenziselwa ukulinganisa amafrikhwensi angaphezu kuka-500 kHz.Sebenzisa I-Tektronix TDS 5034 oscilloscope ukukala i-voltage regulator waveform.
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